Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting
نویسندگان
چکیده
energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting Taeseok Kim, Kirstin Alberi, Oscar D. Dubon, Michael J. Aziz, and Venkatesh Narayanamurti Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA National Renewable Energy Laboratory, Golden, Colorado 80401, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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